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RN1962TE85LF

Part No RN1962TE85LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2NPN PREBIAS 0.5W US6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 2 NPN - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Resistor - Emitter Base (R2) (Ohms) 10k
Typical Gain (hFE) (Min) 50 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 250MHz
Maximum Power Dissipation 500mW
Mounting SMD (SMT)
Case / Package US6
Win Source Part Number 115010-RN1962TE85LF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN1962TE85LF CAD Model

Description

The Toshiba Semiconductor and Storage RN1962TE85LF is a dual NPN pre-biased transistor designed for use in a variety of electronic circuits.

  • Supply and Demand Status: balanced
  • Maximum Current Collector: 100mA
  • Collector-Emitter Breakdown Voltage: 50V
  • Housed in: a US6 package
  • Gain: 50 @ 10mA and 5V
  • Maximum Power Dissipation: 500mW
  • Maximum Transition Frequency: 250MHz
  • Ideal for use in: audio amplifiers, switching circuits, and power supplies

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