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RN2105MFV,L3F(CT

Part No RN2105MFV,L3F(CT
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 50V 0.1A VESM
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Bipolar Transistors
Mfr Toshiba Semiconductor and Storage
Series -
Package Tape & Reel
Product Status Active
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 2.2 kOhms
Resistor - Emitter Base (R2) 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition 250 MHz
Power - Max 150 mW
Mounting Type Surface Mount
Package / Case SOT-723
Supplier Device Package VESM
Base Product Number RN2105
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0075
Win Source Part Number 1376940-RN2105MFV,L3F(CT
Ultra Librarian 3D Model Ultra Librarian RN2105MFV,L3F(CT CAD Model

Description

The RN2105MFV,L3F(CT Bipolar Transistor is a high-quality component manufactured by Toshiba Semiconductor and Storage.

  • Transistor Type: PNP Pre-Biased
  • Maximum Collector Current: 100mA
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Mounting Type: Surface Mount
  • Package: SOT-723
  • DC Current Gain: 80 @ 10mA and 5V
  • Status: Active

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,375+ $0.0364 $50.0500
2,935+ $0.0341 $100.0835
4,550+ $0.0330 $150.1500
6,515+ $0.0307 $200.0105
8,475+ $0.0295 $250.0125
10,565+ $0.0284 $300.0460
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 39,380 pieces
MOQ: 1375 pcs
Order Increment : 1 pcs
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