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Same model may have multiple batches, images only for reference.
RN2106MFV,L3F(CT Real Image
Same model may have multiple batches, images only for reference.

RN2106MFV,L3F(CT

Part No RN2106MFV,L3F(CT
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 50V 0.1A VESM / Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 250 MHz 150 mW Surface Mount VESM
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Bipolar Transistors
Mfr Toshiba Semiconductor and Storage
Package Tape & Reel
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 4.7 kOhms
Resistor - Emitter Base (R2) 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition 250 MHz
Power - Max 150 mW
Mounting Type Surface Mount
Package / Case SOT-723
Supplier Device Package VESM
Base Product Number RN2106
Standard Package 8,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0075
Win Source Part Number 1336815-RN2106MFV,L3F(CT
Ultra Librarian 3D Model Ultra Librarian RN2106MFV,L3F(CT CAD Model

Description

The Toshiba Semiconductor and Storage RN2106MFV,L3F(CT) is a bipolar transistor integrated circuit designed for use in electronic circuits.

  • Transistor Type: PNP Pre-Biased
  • Power Max: 150 mW
  • Voltage (Collector Emitter Breakdown Max): 50V
  • Current Collector Cutoff (Max): 500nA
  • Frequency Transition: 250 MHz
  • Package: SOT-723
  • Supplier Device Package: VESM
  • MSL: 1 (Unlimited)
  • Base Resistor (R1): 4.7 kOhms
  • Emitter Base Resistor (R2): 47 kOhms
  • HTSUS: 8541.21.0075

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880+ $0.0658 $57.9040
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3,335+ $0.0520 $173.4200
4,550+ $0.0508 $231.1400
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7,895+ $0.0439 $346.5905
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