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Same model may have multiple batches, images only for reference.
RN2109ACT(TPL3) Real Image
Same model may have multiple batches, images only for reference.

RN2109ACT(TPL3)

Part No RN2109ACT(TPL3)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 0.1W CST3
Datasheet
RN2109ACT(TPL3) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity PNP - Pre-Biased
Maximum Current Collector 80mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 47k
Resistor - Emitter Base (R2) (Ohms) 22k
Typical Gain (hFE) (Min) 70 @ 10mA, 5V
Max Vce (sat) 150mV @ 250μA, 5mA
Collector Cut-off Current(Max) 500nA
Maximum Power Dissipation 100mW
Mounting SMD (SMT)
Case / Package CST3
Win Source Part Number 113881-RN2109ACT(TPL3)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN2109ACT(TPL3) CAD Model

Description

The Toshiba Semiconductor and Storage RN2109ACT(TPL3) is a PNP pre-biased transistor designed for use in discrete semiconductor products.

  • Maximum Current Collector: 80mA
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Typical Gain (hFE): 70 @ 10mA, 5V
  • Compliance: RoHS compliant
  • Operating Temperature Range: -55°C to 150°C

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