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Same model may have multiple batches, images only for reference.
RN2110,LF(CB Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN2110,LF(CB

Part No RN2110,LF(CB
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 50V 0.1W SSM
Datasheet
RN2110,LF(CB Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity PNP - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 4.7k
Typical Gain (hFE) (Min) 120 @ 1mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 200MHz
Maximum Power Dissipation 100mW
Mounting SMD (SMT)
Case / Package SSM
Win Source Part Number 1092489-RN2110,LF(CB
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN2110,LF(CB CAD Model

Description

The RN2110,LF(CB) is a PNP pre-biased transistor from Toshiba Semiconductor and Storage.

  • Use: widely used in various applications due to its excellent performance and reliability
  • Supply Voltage Range: 50V
  • Maximum Power Dissipation: 100mW
  • Popularity: medium
  • Supply and Demand Status: sufficient

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