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MPSW01G

Part No MPSW01G
Manufacturer SANYO Semiconductor (U.S.A) Corporation
Catalog RF Transistors (BJT)
Description TRANS NPN 30V 1A TO92  /  Bipolar (BJT) Transistor NPN 30 V 1 A 50MHz 1 W Through Hole TO-92 (TO-226)
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr Sanyo
Package Box
Product Status Obsolete
Transistor Type NPN
Current - Collector (Ic) (Max) 1 A
Voltage - Collector Emitter Breakdown (Max) 30 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 1A
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 100mA, 1V
Power - Max 1 W
Frequency - Transition 50MHz
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body (Formed Leads)
Supplier Device Package TO-92 (TO-226)
ECCN EAR99
HTSUS 8541.29.0075
Other Names ONSSNYMPSW01G,2156-MPSW01G-SA
Standard Package 5,000
Win Source Part Number 963856-MPSW01G
Ultra Librarian 3D Model Ultra Librarian MPSW01G CAD Model

Description

The MPSW01G from SANYO Semiconductor is a transistor that is categorized under Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single.

  • Maximum Power: 1 W
  • Maximum Voltage: 30 V
  • Current - Collector (Ic) (Max): 1 A
  • Transistor Type: NPN
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
  • Frequency - Transition: 50MHz
  • Mounting Type: Through hole
  • Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
  • Supplier Device Package: TO-92 (TO-226)
  • Product Status: Obsolete

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.1435 $62.8925
125+ $0.9379 $117.2375
195+ $0.9090 $177.2550
265+ $0.8790 $232.9350
340+ $0.8501 $289.0340
455+ $0.7623 $346.8465
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Availability: 23,929 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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