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Same model may have multiple batches, images only for reference.
RN2701JE(TE85L,F) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN2701JE(TE85L,F)

Part No RN2701JE(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2PNP PREBIAS 0.1W ESV
Datasheet
RN2701JE(TE85L,F) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 4.7k
Resistor - Emitter Base (R2) (Ohms) 4.7k
Typical Gain (hFE) (Min) 30 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 200MHz
Maximum Power Dissipation 100mW
Mounting SMD (SMT)
Case / Package ESV
Win Source Part Number 123723-RN2701JE(TE85L,F)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN2701JE(TE85L,F) CAD Model

Description

The RN2701JE(TE85L,F) is a transistor component manufactured by Toshiba Semiconductor and Storage.

  • Status: Active
  • Popularity: Medium
  • Supply and Demand: Balanced
  • Product Category: Discrete Semiconductor Products
  • Maximum Current Collector: 100mA
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Typical Gain (hFE): 30 @ 10mA, 5V
  • Maximum Power Dissipation: 100mW

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Quantity Unit Price Ext. Price
5+ $13.9755 $69.8775
11+ $11.4680 $126.1480
16+ $11.1088 $177.7408
22+ $10.7507 $236.5154
28+ $10.3927 $290.9956
38+ $9.3174 $354.0612
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Availability: 2,180 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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