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RN4906,LF

Part No RN4906,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS NPN/PNP PREBIAS 0.2W US6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 1 NPN, 1 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 4.7k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 200MHz
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package US6
Win Source Part Number 109816-RN4906,LF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN4906,LF CAD Model

Description

The Toshiba RN4906,LF is a dual NPN and PNP pre-biased transistor designed for high-frequency applications.

  • Maximum Current Collector: 100mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Vce (sat): 300mV @ 250μA, 5mA
  • Collector Cut-Off Current (Max): 500nA
  • Typical Gain (hFE) (Min): 80 @ 10mA, 5V
  • Maximum Power Dissipation: 200mW
  • Package: US6 case
  • Popularity: Medium

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