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Same model may have multiple batches, images only for reference.
RN4907FE,LF(CB Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN4907FE,LF(CB

Part No RN4907FE,LF(CB
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS NPN/PNP PREBIAS 0.1W ES6
Datasheet
RN4907FE,LF(CB Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 1 NPN, 1 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 250MHz, 200MHz
Maximum Power Dissipation 100mW
Mounting SMD (SMT)
Case / Package ES6
Win Source Part Number 1092516-RN4907FE,LF(CB
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN4907FE,LF(CB CAD Model

Description

The RN4907FE,LF(CB) is a pre-biased dual NPN and PNP transistor with a frequency transition of 250MHz and 200MHz, manufactured by Toshiba Semiconductor and Storage.

  • Manufacturer: Toshiba Semiconductor and Storage
  • Type: Pre-Biased Dual NPN and PNP Transistor
  • Frequency Transition: 250MHz (NPN), 200MHz (PNP)
  • Collector Cut-off Current: 500nA
  • Typical Gain (hFE): 80 @ 10mA, 5V
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Power Dissipation: 100mW
  • Case/Package: ES6
  • Maximum Current Collector: 100mA
  • Vce (sat): 300mV @ 250μA, 5mA
  • Resistor Values: 10k (Base R1), 47k (Emitter Base R2)
  • Application: Discrete Semiconductor Products

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