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Same model may have multiple batches, images only for reference.
RN4983,LF Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN4983,LF

Part No RN4983,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS NPN/PNP PREBIAS 0.2W US6
Datasheet
RN4983,LF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 1 NPN, 1 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 22k
Resistor - Emitter Base (R2) (Ohms) 22k
Typical Gain (hFE) (Min) 70 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 250MHz, 200MHz
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package US6
Win Source Part Number 097118-RN4983,LF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN4983,LF CAD Model

Description

The electronic component with Id 304579 is a product manufactured by Toshiba Semiconductor and Storage.

  • Win Source Part Number: 097118-RN4983,LF
  • Category: Discrete Semiconductor Products
  • Packaging: Reel - TR
  • Mounting: SMD (SMT)
  • Frequency - Transition: 250MHz, 200MHz
  • Transistor Polarity: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): 22k
  • Status: active
  • Case / Package: US6
  • Maximum Current Collector: 100mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
  • Max Vce (sat): 300mV @ 250μA, 5mA
  • Collector Cut-off Current(Max): 500nA
  • Typical Gain (hFE) (Min): 70 @ 10mA, 5V
  • Maximum Power Dissipation: 200mW
  • Supply and Demand Status: sufficient

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