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Same model may have multiple batches, images only for reference.
RN4987 Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN4987

Part No RN4987
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS NPN/PNP PREBIAS 0.2W US6
Datasheet
RN4987 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 1 NPN, 1 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 250MHz, 200MHz
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package US6
Win Source Part Number 210837-RN4987
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN4987 CAD Model

Description

The Toshiba Semiconductor and Storage RN4987 is a pre-biased dual transistor with NPN and PNP polarity.

  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Power Dissipation: 200mW
  • Win Source Part Number: 210837-RN4987
  • Suitable for: discrete semiconductor products category
  • Ideal for: applications that require high gain and low noise

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1,855+ $0.0312 $57.8760
4,550+ $0.0254 $115.5700
7,145+ $0.0243 $173.6235
9,525+ $0.0243 $231.4575
12,500+ $0.0231 $288.7500
16,670+ $0.0208 $346.7360
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