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RN4987

Part No RN4987
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS NPN/PNP PREBIAS 0.2W US6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 1 NPN, 1 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 250MHz, 200MHz
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package US6
Win Source Part Number 210837-RN4987
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN4987 CAD Model

Description

The Toshiba Semiconductor and Storage RN4987 is a pre-biased dual transistor with NPN and PNP polarity.

  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Power Dissipation: 200mW
  • Win Source Part Number: 210837-RN4987
  • Suitable for: discrete semiconductor products category
  • Ideal for: applications that require high gain and low noise

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,855+ $0.0312 $57.8760
4,550+ $0.0254 $115.5700
7,145+ $0.0243 $173.6235
9,525+ $0.0243 $231.4575
12,500+ $0.0231 $288.7500
16,670+ $0.0208 $346.7360
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 159,600 pieces
MOQ: 1855 pcs
Order Increment : 1 pcs
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