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Same model may have multiple batches, images only for reference.
RN4989FE,LF(CT
Same model may have multiple batches, images only for reference.

RN4989FE,LF(CT

Part No RN4989FE,LF(CT
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description NPN + PNP BRT Q1BSR47KOHM Q1BER2
Datasheet
RN4989FE,LF(CT Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 15 Weeks
Features Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz, 200MHz 100mW Surface Mount ES6
Manufacturer Toshiba Semiconductor and Storage
Package Reel - TR
Mounting Surface Mount
Package SOT-563, SOT-666
Case / Package ES6
Family Name RN4989
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0075
Other Part Number RN4989FELF(CTCT, RN4989FELF(CTTR, RN4989FE,LF(CB, RN4989FELF(CTDKR
Quantity per package 4000
Popularity High
Supply and Demand Status Balance
Win Source Part Number 932300-RN4989FE,LF(CT
Ultra Librarian 3D Model Ultra Librarian RN4989FE,LF(CT CAD Model

Description

The Toshiba Semiconductor and Storage 932300-RN4989FE,LF(CT is a pre-biased bipolar transistor (BJT) with 1 NPN and 1 PNP.

  • Configuration: 1 NPN and 1 PNP
  • Breakdown Voltage: 50V
  • Maximum Collector Current: 100mA
  • Mounting: Surface mountable
  • Package: ES6 case
  • Frequency Range: 250MHz and 200MHz
  • Operating Temperature: -55°C to 150°C (TJ)
  • Supply and Demand Status: Balanced
  • Quantity per Package: 4000
  • Estimated Production Lead Time: 15 weeks
  • ECCN: EAR99

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