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Same model may have multiple batches, images only for reference.
SSM3J140TU,LF Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

SSM3J140TU,LF

Part No SSM3J140TU,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Toshiba Semiconductor and Storage
Series U-MOSVI
Package Tape & Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 4.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 25.8mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 24.8 nC @ 4.5 V
Vgs (Max) +6V, -8V
Input Capacitance (Ciss) (Max) @ Vds 1800 pF @ 10 V
Power Dissipation (Max) 500mW (Ta)
Temperature Range - Operating 150°C
Mounting SMD (SMT)
Supplier Device Package UFM
Package / Case 3-SMD, Flat Leads
Base Product Number SSM3J140
Other Names SSM3J140TU,LF(T,SSM3J140TULFCT,SSM3J140TULFTR,SSM3J140TULFDKR,SSM3J140TU,LF(B
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1277943-SSM3J140TU,LF
Ultra Librarian 3D Model Ultra Librarian SSM3J140TU,LF CAD Model

Description

The Toshiba Semiconductor and Storage 1277943-SSM3J140TU,LF is a P-channel MOSFET designed for use in discrete semiconductor products, specifically transistors - FETs, MOSFETs - Single.

  • Series: U-MOSVI
  • Package: Tape & Reel
  • Drain to Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id) @ 25°C: 4.4A (Ta)
  • Rds On (Max) @ Id, Vgs: 25.8mOhm @ 4A, 4.5V
  • Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V
  • Mounting Technology: SMD (SMT)
  • Power Dissipation (Max): 500mW (Ta)

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