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SSM3J143TU,LF

Part No SSM3J143TU,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 5.5A UFM  /  P-Channel 20 V 5.5A (Ta) 500mW (Ta) Surface Mount UFM
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Toshiba Semiconductor and Storage
Series U-MOSVI
Package Tape & Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 29.8mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 12.8 nC @ 4.5 V
Vgs (Max) +6V, -8V
Input Capacitance (Ciss) (Max) @ Vds 840 pF @ 10 V
Power Dissipation (Max) 500mW (Ta)
Temperature Range - Operating 150°C
Mounting SMD (SMT)
Supplier Device Package UFM
Package / Case 3-SMD, Flat Lead
Base Product Number SSM3J143
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0095
Other Names SSM3J143TULFCT,SSM3J143TULFDKR,SSM3J143TU,LF(T,SSM3J143TULFTR,SSM3J143TU,LF(B
Standard Package 3,000
Win Source Part Number 1167784-SSM3J143TU,LF
Ultra Librarian 3D Model Ultra Librarian SSM3J143TU,LF CAD Model

Description

The Toshiba Semiconductor and Storage SSM3J143TU,LF is a P-channel MOSFET electronic component with a U-MOSVI series.

  • Channel Type: P-channel
  • Series: U-MOSVI
  • Maximum Drain to Source Voltage: 20 V
  • Continuous Drain Current: 5.5A @ 25°C
  • Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V
  • Temperature Range: 150°C

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