The SSM3J56MFV is a P-channel MOSFET from Toshiba. This MOSFET is designed for use in load switches and power management applications. It features low on-resistance and a small package size, making it suitable for portable devices. Its low voltage operation capability extends its applicability.

Applications

• Load switches
• Power management circuits
• DC-DC converters
• Portable devices
• Battery protection circuits

Features

• P-Channel MOSFET
• Drain-Source Voltage: -20V
• Gate-Source Voltage: ±8V
• Continuous Drain Current: -3A
• On-Resistance: 68 mΩ (typical)
• Small Surface Mount Package

Benefits

• Low on-resistance minimizes power loss and improves efficiency.
• Small package size allows for integration into compact devices.
• Suitable for low voltage operation.
• High current capability for load switching applications.

Additional Details

The SSM3J56MFV uses trench gate MOSFET technology. It is lead-free and RoHS compliant. The gate threshold voltage is specified in the datasheet. The device is typically used in circuits where a P-channel MOSFET is required to control the flow of current to a load. Thermal considerations should be taken into account when using this device at high currents. ESD protection is integrated into the device.