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Same model may have multiple batches, images only for reference.
SSM3J64CTC,L3F Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

SSM3J64CTC,L3F

Part No SSM3J64CTC,L3F
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Toshiba Semiconductor and Storage
Series U-MOSVII
Package Tape & Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V
Current - Continuous Drain (Id) @ 25°C 1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
Rds On (Max) @ Id, Vgs 370mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 10 V
Power Dissipation (Max) 500mW (Ta)
Temperature Range - Operating 150°C
Mounting SMD (SMT)
Supplier Device Package CST3C
Package / Case SC-101, SOT-883
Base Product Number SSM3J64
Other Names SSM3J64CTCL3FDKR,SSM3J64CTCL3FTR,SSM3J64CTC,L3F(T,SSM3J64CTC,L3F(B,SSM3J64CTCL3FCT
Standard Package 10,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1277940-SSM3J64CTC,L3F
Ultra Librarian 3D Model Ultra Librarian SSM3J64CTC,L3F CAD Model

Description

The 1277940-SSM3J64CTC,L3F is a P-channel MOSFET module from the U-MOSVII series manufactured by Toshiba Semiconductor and Storage.

  • Package: Tape and Reel
  • Mounting Type: Surface-Mount
  • Drain to Source Voltage: 12 V
  • Continuous Drain Current: 1A (Ta)
  • Rds On (Max) @ Id, Vgs: 370mOhm @ 600mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Power Dissipation: 500mW (Ta)
  • Maximum Gate-Source Voltage: ±10V
  • Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V

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