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SSM3K03TE TE85L

Part No SSM3K03TE TE85L
Manufacturer Toshiba Semiconductor and Storage
Catalog FETs - Single
Sample
Rohs State rohs
ECAD Module
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Manufacturer Toshiba Semiconductor and Storage
Category Discrete Semiconductor Products
Family FETs - Single
Win Source Part Number 192935-SSM3K03TE TE85L
Popularity Low
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SSM3K03TE TE85L CAD Model

Description

The SSM3K03TE TE85L is a silicon N-channel MOSFET from Toshiba Semiconductor and Storage. The 'TE85L' suffix indicates a specific tape and reel packaging for automated assembly. It is designed for high-speed switching applications and load switching. This surface-mount device is available in a small, low-profile package, making it suitable for space-constrained applications.

Applications

  • High-Speed Switching
  • Load Switching
  • DC-DC converters
  • Power management circuits in portable devices
  • Motor control circuits

Features

  • N-Channel MOSFET
  • Low on-resistance (RDS(ON))
  • Low gate charge
  • Small surface-mount package (SOT-23)
  • High-speed switching capability
  • Lead-free and RoHS compliant
  • TE85L Tape and Reel Packaging for automated assembly

Benefits

  • Improved efficiency: The low on-resistance minimizes power loss during switching, leading to improved energy efficiency in the application.
  • Reduced board space: The small SOT-23 package allows for a compact design, saving valuable board space.
  • High-speed switching: Enables faster switching speeds, which can improve the performance of the application.
  • Simplified design: The device is easy to use and requires minimal external components.
  • Environmentally friendly: Lead-free and RoHS compliant, meeting environmental regulations.
  • Optimized for automated assembly: TE85L packaging ensures efficient pick-and-place during manufacturing.

Technical Specifications

The SSM3K03TE TE85L typically features a drain-source voltage (VDSS) of 30V, a gate-source voltage (VGSS) of ±20V, and a continuous drain current (ID) of around 1.5A. The on-resistance (RDS(ON)) is typically less than 0.3 ohms at VGS = 10V. It is designed to operate over a temperature range of -55°C to +150°C. The specific values may vary slightly; refer to the official datasheet for precise specifications.

This MOSFET provides a balance of performance, size, and cost, making it a popular choice for various switching and power management applications, especially in portable and battery-powered devices where efficiency and space are critical. The TE85L packaging makes it suitable for high-volume manufacturing environments.

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Pricing & Ordering

Quantity Unit Price Ext. Price
590+ $0.0982 $57.9380
1,430+ $0.0809 $115.6870
2,210+ $0.0785 $173.4850
3,035+ $0.0762 $231.2670
3,970+ $0.0728 $289.0160
5,265+ $0.0658 $346.4370
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 29,600 pieces
MOQ: 590 pcs
Order Increment : 1 pcs
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