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Same model may have multiple batches, images only for reference.
SSM3K09FU,LF Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

SSM3K09FU,LF

Part No SSM3K09FU,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Toshiba Semiconductor and Storage
Series π-MOSVI
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 400mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 3.3V, 10V
Rds On (Max) @ Id, Vgs 700mOhm @ 200MA, 10V
Vgs(th) (Max) @ Id 1.8V @ 100µA
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 20 pF @ 5 V
Power Dissipation (Max) 150mW (Ta)
Temperature Range - Operating 150°C
Mounting SMD (SMT)
Supplier Device Package USM
Package / Case SC-70, SOT-323
Base Product Number SSM3K09
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1314775-SSM3K09FU,LF
Ultra Librarian 3D Model Ultra Librarian SSM3K09FU,LF CAD Model

Description

The Toshiba Semiconductor and Storage MOSFET (Metal Oxide) transistor, part of the π-MOSVI series, is a N-Channel FET with a maximum drain to source voltage of 30 V and continuous drain current of 400mA @ 25°C.

  • Drain to Source Voltage: 30 V
  • Continuous Drain Current: 400mA @ 25°C
  • Input Capacitance: 20 pF @ 5 V
  • Gate-Source Voltage: ±20V
  • Power Dissipation: 150mW @ Ta
  • Package/Case: SC-70, SOT-323
  • Supplier Device Package: USM
  • Drive Voltage: 3.3V, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
395+ $0.1277 $50.4415
955+ $0.1048 $100.0840
1,480+ $0.1015 $150.2200
2,040+ $0.0982 $200.3280
2,635+ $0.0949 $250.0615
3,530+ $0.0851 $300.4030
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 200,532 pieces
MOQ: 395 pcs
Order Increment : 1 pcs
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