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Same model may have multiple batches, images only for reference.
SSM3K123TU,LF Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

SSM3K123TU,LF

Part No SSM3K123TU,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 4.2A UFM
Datasheet
SSM3K123TU,LF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4V
Gate-Source Threshold Voltage 1V @ 1mA
Max Gate Charge 13.6nC @ 4V
Max Input Capacitance 1010pF @ 10V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 500mW (Ta)
Maximum Rds On at Id,Vgs 28 mOhm @ 3A, 4V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package UFM
Dimension 3-SMD, Flat Leads
Win Source Part Number 101020-SSM3K123TU,LF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SSM3K123TU,LF CAD Model

Description

The Toshiba Semiconductor and Storage SSM3K123TU,LF is a MOSFET transistor used in discrete semiconductor products.

  • Polarity: N-channel
  • Maximum Power Dissipation: 500mW (Ta)
  • Supply Voltage: 1.5V
  • Drive Voltage: 4V
  • Supply and Demand Status: Sufficient
  • Manufacturer: Toshiba Semiconductor and Storage

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Pricing & Ordering

Quantity Unit Price Ext. Price
230+ $0.2186 $50.2780
560+ $0.1794 $100.4640
865+ $0.1738 $150.3370
1,190+ $0.1682 $200.1580
1,540+ $0.1626 $250.4040
2,060+ $0.1458 $300.3480
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 63,230 pieces
MOQ: 230 pcs
Order Increment : 1 pcs
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