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Same model may have multiple batches, images only for reference.
SSM3K15ACT(TPL3) Real Image
Same model may have multiple batches, images only for reference.

SSM3K15ACT(TPL3)

Part No SSM3K15ACT(TPL3)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Toshiba Semiconductor and Storage
Series U-MOSIII
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4V
Rds On (Max) @ Id, Vgs 3.6Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id 1.5V @ 100µA
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 13.5 pF @ 3 V
Power Dissipation (Max) 100mW (Ta)
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package CST3
Package / Case SC-101, SOT-883
Base Product Number SSM3K15
Other Names SSM3K15ACT(TPL3)DKR,SSM3K15ACTTPL3,SSM3K15ACT(TPL3)CT,SSM3K15ACT(TPL3)TR
Standard Package 10,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1277953-SSM3K15ACT(TPL3)
Ultra Librarian 3D Model Ultra Librarian SSM3K15ACT(TPL3) CAD Model

Description

The Toshiba Semiconductor and Storage SSM3K15ACT(TPL3) is an N-Channel MOSFET that is part of the U-MOSIII series.

  • Maximum Drain-Source Voltage: 30V
  • Continuous Drain Current: 100mA @ 25°C
  • Maximum On-Resistance: 3.6Ohm @ 10mA and 4V gate-source voltage
  • Gate-Source Threshold Voltage: 1.5V @ 100μA
  • Maximum Power Dissipation: 100mW @ Ta
  • Case: SC-101, SOT-883
  • Supplier Device Package: CST3
  • Maximum Gate-Source Voltage: ±20V
  • Input Capacitance: 13.5pF @ 3V

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