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Same model may have multiple batches, images only for reference.
SSM3K17SU,LF Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

SSM3K17SU,LF

Part No SSM3K17SU,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 50V 100MA USM
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 50V
Continuous Drain Current at 25°C 100mA (Ta)
Gate-Source Threshold Voltage 1.5V @ 1μA
Max Input Capacitance 7pF @ 3V
Power Dissipation (Max) 150mW (Ta)
Maximum Rds On at Id,Vgs 20 Ohm @ 10mA, 4V
Mounting SMD (SMT)
Case / Package USM
Dimension SC-70, SOT-323
Win Source Part Number 1102295-SSM3K17SU,LF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SSM3K17SU,LF CAD Model

Description

This MOSFET electronic component is manufactured by Toshiba Semiconductor and Storage.

  • Manufacturer: Toshiba Semiconductor and Storage
  • Supply and Demand Status: Sufficient
  • Status: Obsolete (EOL)
  • Case/Package: USM (SC-70, SOT-323)
  • Drain-Source Breakdown Voltage: 50V
  • Continuous Drain Current @ 25°C: 100mA (Ta)
  • Maximum Rds On @ Id, Vgs: 20 Ohm @ 10mA, 4V
  • Gate-Source Threshold Voltage: 1.5V @ 1μA
  • Maximum Input Capacitance: 7pF @ 3V

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