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SSM3K301T(TE85L,F)

Part No SSM3K301T(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 3.5A TSM
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4V
Max Gate Charge 4.8nC @ 4V
Max Input Capacitance 320pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 700mW (Ta)
Maximum Rds On at Id,Vgs 56 mOhm @ 2A, 4V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package TSM
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 098519-SSM3K301T(TE85L,F)
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SSM3K301T(TE85L,F) CAD Model

Description

The Toshiba SSM3K301T(TE85L,F) is a MOSFET technology N-Channel polarity product with a power dissipation (Max) of 700mW (Ta).

  • Polarity: N-Channel
  • Power Dissipation (Max): 700mW (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
  • Temperature Range for Operating: 150°C (TJ)
  • Case/Package: TSM
  • Dimensions: TO-236-3, SC-59, SOT-23-3
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 3.5A (Ta)
  • Maximum Gate Charge: 4.8nC @ 4V
  • Maximum Input Capacitance: 320pF @ 10V
  • Maximum Gate-Source Voltage: ±12V
  • Maximum Rds On @ Id,Vgs: 56 mOhm @ 2A, 4V
  • Supply and demand status: sufficient.

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Pricing & Ordering

Quantity Unit Price Ext. Price
355+ $0.1640 $58.2200
865+ $0.1340 $115.9100
1,330+ $0.1305 $173.5650
1,835+ $0.1259 $231.0265
2,360+ $0.1224 $288.8640
3,160+ $0.1097 $346.6520
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 64,300 pieces
MOQ: 355 pcs
Order Increment : 1 pcs
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