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SSM3K318T,LF

Part No SSM3K318T,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 2.5A TSM
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Cut Reel
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Max Gate Charge 7nC @ 10V
Max Input Capacitance 235pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 700mW (Ta)
Maximum Rds On at Id,Vgs 107 mOhm @ 2A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package TSM
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1102298-SSM3K318T,LF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SSM3K318T,LF CAD Model

Description

The Toshiba Semiconductor and Storage 1102298-SSM3K318T,LF is an N-Channel MOSFET with a drain-source breakdown voltage of 60V and a continuous drain current of 2.5A (Ta).

  • Maximum Rds On @ Id,Vgs: 107 mOhm @ 2A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 7nC @ 10V
  • Maximum Input Capacitance: 235pF @ 30V
  • Package: TSM
  • Perfect for: Use in discrete semiconductor products

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Pricing & Ordering

Quantity Unit Price Ext. Price
180+ $0.3269 $58.8420
435+ $0.2680 $116.5800
670+ $0.2599 $174.1330
920+ $0.2518 $231.6560
1,185+ $0.2437 $288.7845
1,590+ $0.2183 $347.0970
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,606 pieces
MOQ: 180 pcs
Order Increment : 1 pcs
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