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SSM3K341R,LF

Part No SSM3K341R,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 6A
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2.5V @ 100μA
Max Gate Charge 9.3nC @ 10V
Max Input Capacitance 550pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.2W (Ta)
Maximum Rds On at Id,Vgs 36 mOhm @ 5A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23F
Dimension SOT-23-3 Flat Leads
Win Source Part Number 1102303-SSM3K341R,LF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SSM3K341R,LF CAD Model

Description

The Toshiba Semiconductor and Storage MOSFET is a N-channel device with a drain-source breakdown voltage of 60V.

  • Category: Discrete Semiconductor Products
  • Maximum Power Dissipation: 1.2W
  • Temperature Range: -55°C to 175°C
  • Continuous Drain Current: 6A @ 25°C
  • Maximum Rds On @ Id, Vgs: 36 mOhm @ 5A, 10V
  • Gate-Source Threshold Voltage: 2.5V @ 100μA
  • Maximum Gate Charge: 9.3nC @ 10V
  • Maximum Input Capacitance: 550pF @ 10V
  • Mounting: SMD (SMT)
  • Package: SOT-23F
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
425+ $0.1180 $50.1500
905+ $0.1105 $100.0025
1,405+ $0.1068 $150.0540
2,015+ $0.0993 $200.0895
2,620+ $0.0956 $250.4720
3,270+ $0.0918 $300.1860
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 280,000 pieces
MOQ: 425 pcs
Order Increment : 1 pcs
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