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SSM6J207FE,LF

Part No SSM6J207FE,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 1.4A ES6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 1.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2.6V @ 1mA
Max Input Capacitance 137pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 500mW (Ta)
Maximum Rds On at Id,Vgs 251 mOhm @ 650mA, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package ES6 (1.6x1.6)
Dimension SOT-563, SOT-666
Win Source Part Number 102176-SSM6J207FE,LF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SSM6J207FE,LF CAD Model

Description

The SSM6J207FE,LF is a P-channel MOSFET manufactured by Toshiba Semiconductor and Storage. It is designed for use in various switching applications, offering low on-resistance and fast switching speeds. This MOSFET is particularly well-suited for load switching and power management in portable devices and other low-voltage circuits.

Applications:

  • Load switch in portable devices (smartphones, tablets, laptops)
  • Power management in battery-powered systems
  • DC-DC converters
  • Analog switches
  • General-purpose switching

Features:

  • P-channel MOSFET: Allows for easy implementation in low-side switching configurations.
  • Low on-resistance (RDS(on)): Minimizes power loss and improves efficiency.
  • Low gate threshold voltage (Vth): Enables direct drive from logic circuits.
  • Small surface mount package: Allows for high-density board designs.
  • Halogen-free: Environmentally friendly, compliant with RoHS standards.

Benefits:

  • Increased energy efficiency: Reduced power dissipation due to low on-resistance extends battery life in portable devices.
  • Reduced heat generation: Lower power losses result in cooler operation and improved system reliability.
  • Simplified circuit design: Low gate threshold voltage allows direct drive from logic circuits, reducing the need for additional components.
  • Compact footprint: Small surface mount package is ideal for space-constrained applications.
  • Environmentally compliant: Halogen-free construction promotes environmental sustainability.

Additional Details:

The SSM6J207FE,LF is characterized by its low drain-source on-resistance, which is a critical parameter for minimizing power loss in switching applications. Its low gate threshold voltage enables it to be driven directly from logic-level signals, simplifying circuit design and reducing component count. The small surface mount package allows for efficient use of board space, making it suitable for high-density applications.

This MOSFET's fast switching speed makes it suitable for use in high-frequency DC-DC converters and other switching circuits. The device's thermal resistance is also an important parameter to consider for thermal design, ensuring that the MOSFET operates within its safe operating area. The SSM6J207FE,LF is commonly used in a wide range of portable and battery-powered applications due to its excellent combination of low on-resistance, low threshold voltage, and compact size.

The 'LF' suffix indicates that the device is lead-free and compliant with RoHS environmental standards. This is an important consideration for manufacturers who are committed to producing environmentally friendly products. The MOSFET is supplied in tape and reel packaging for automated assembly processes.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.9138 $66.9830
75+ $1.5708 $117.8100
115+ $1.5211 $174.9265
160+ $1.4726 $235.6160
205+ $1.4230 $291.7150
275+ $1.2763 $350.9825
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,700 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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