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SSM6J502NU,LF

Part No SSM6J502NU,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P CH 20V 6A 2-2AA1A
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Gate-Source Threshold Voltage 1V @ 1mA
Max Gate Charge 24.8nC @ 4.5V
Max Input Capacitance 1800pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 1W (Ta)
Maximum Rds On at Id,Vgs 23.1 mOhm @ 4A, 4.5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-UDFNB (2x2)
Dimension 6-WDFN Exposed Pad
Win Source Part Number 114449-SSM6J502NU,LF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SSM6J502NU,LF CAD Model

Description

The SSM6J502NU,LF is a MOSFET semiconductor product from Toshiba Semiconductor and Storage.

  • Category: discrete semiconductor products
  • Popularity: medium
  • Designed for: power switching circuits
  • Features: high-speed switching performance
  • Reliability: highly reliable
  • Good choice for: customers who are looking for a high-performance MOSFET

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Pricing & Ordering

Quantity Unit Price Ext. Price
355+ $0.1640 $58.2200
865+ $0.1340 $115.9100
1,330+ $0.1305 $173.5650
1,835+ $0.1259 $231.0265
2,360+ $0.1224 $288.8640
3,160+ $0.1097 $346.6520
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 17,400 pieces
MOQ: 355 pcs
Order Increment : 1 pcs
*Need More Quantity? *Request a Bulk Quantity Quotation?

Shipping Information

Shipped from HK warehouse
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