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SSM6K202FE

Part No SSM6K202FE
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description High-Speed Switching Applications
Sample
Rohs State rohs
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Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 1259578-SSM6K202FE
Manufacturer Homepage www.semicon.toshiba.co.jp/eng
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SSM6K202FE CAD Model

Description

The SSM6K202FE is a low on-resistance N-channel MOSFET manufactured by Toshiba Semiconductor and Storage. This MOSFET is designed for load switching and DC-DC converter applications where efficiency and compact size are critical. It is commonly used in portable devices and power management circuits.

Applications

  • Load Switching: Used for controlling power to various loads in portable devices and other electronic systems.
  • DC-DC Converters: Employed in step-up and step-down DC-DC converters for power management.
  • Power Management Circuits: Found in various power management ICs for efficient power distribution.
  • Battery Charging Circuits: Used in battery chargers for controlling the charging current and voltage.
  • LED Lighting: Can be used as a switching element in LED drivers.

Features

  • Low On-Resistance (RDS(on)): Minimizes power loss and improves efficiency, especially at low voltages.
  • N-Channel MOSFET: Simple gate drive requirements compared to P-channel MOSFETs.
  • Small Package: Offered in a compact package for space-constrained applications.
  • Logic Level Gate Drive: Can be driven directly from logic-level signals, simplifying the drive circuitry.
  • Low Input Capacitance: Reduces switching losses and improves efficiency at high frequencies.

Benefits

  • Improved Efficiency: The low on-resistance minimizes power dissipation and improves overall efficiency.
  • Compact Design: The small package size allows for integration into space-constrained applications.
  • Simplified Circuitry: The logic-level gate drive simplifies the design of the gate drive circuitry.
  • Reduced Heat Dissipation: Lower RDS(on) means less heat generated, reducing the need for heat sinking.
  • Longer Battery Life: In portable devices, the improved efficiency can lead to longer battery life.

Additional Details

The SSM6K202FE's key specifications include drain-source voltage (VDS), gate-source voltage (VGS), drain current (ID), on-resistance (RDS(on)) at various gate voltages, and gate charge (Qg). It is essential to consult the datasheet for detailed electrical characteristics, thermal resistance, and safe operating area. Proper thermal management is crucial for ensuring reliable operation, especially at higher currents. Available in surface mount packages.

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Pricing & Ordering

Quantity Unit Price Ext. Price
615+ $0.0818 $50.3070
1,490+ $0.0672 $100.1280
2,305+ $0.0651 $150.0555
3,175+ $0.0630 $200.0250
4,110+ $0.0609 $250.2990
5,495+ $0.0546 $300.0270
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 58,000 pieces
MOQ: 615 pcs
Order Increment : 1 pcs
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