The SSM6L35FE(TE85LF) is an N-Channel MOSFET from Toshiba Semiconductor and Storage, designed for use in a variety of switching and power management applications. The device's key feature is its low on-resistance, which helps to minimize power loss and improve energy efficiency. Its compact surface mount package makes it ideal for use in space-constrained environments.

Applications

• Load Switching
• DC-DC Conversion
• Power Management in Portable Devices

Features

• N-Channel MOSFET
• Low Drain-Source On-Resistance (RDS(ON))
• Small Surface Mount Package

Benefits

• Reduced Power Loss: The low on-resistance minimizes power dissipation, leading to higher overall efficiency.
• Compact Design: The small surface mount package allows for use in space-sensitive applications.

Technical Specifications

The SSM6L35FE(TE85LF) generally has a Drain-Source Voltage (VDS) rating of 30V and a Gate-Source Voltage (VGS) rating of ±20V. The Drain Current (ID) rating varies based on operating conditions. The Drain-Source On-Resistance (RDS(ON)) is a crucial parameter and is very low to minimize power loss. The Gate Threshold Voltage (VGS(th)) is also an important specification. Please consult the Toshiba datasheet for the SSM6L35FE(TE85LF) for precise technical details.

The package is a surface mount type for simplified assembly. This component complies with RoHS standards.