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Same model may have multiple batches, images only for reference.
SSM6N15AFE,LM Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

SSM6N15AFE,LM

Part No SSM6N15AFE,LM
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 0.1A ES6
Datasheet
SSM6N15AFE,LM Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 100mA
Maximum Rds On at Id,Vgs 4 Ohm @ 10mA, 4V
Gate-Source Threshold Voltage 1.5V @ 100μA
Max Input Capacitance 7.8pF @ 3V
Maximum Power Dissipation 150mW
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package ES6 (1.6x1.6)
Win Source Part Number 030889-SSM6N15AFE,LM
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SSM6N15AFE,LM CAD Model

Description

The SSM6N15AFE,LM from Toshiba Semiconductor and Storage is a dual N-channel FET designed for use in electronic circuits.

  • Family: Discrete semiconductor products
  • Popularity: Medium-popularity product
  • Suitable for: Use in electronic devices that require logic level gate FETs
  • Maximum Power Dissipation: 150mW
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: Up to 100mA

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Pricing & Ordering

Quantity Unit Price Ext. Price
400+ $0.1261 $50.4400
970+ $0.1035 $100.3950
1,500+ $0.1003 $150.4500
2,065+ $0.0970 $200.3050
2,670+ $0.0938 $250.4460
3,570+ $0.0841 $300.2370
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,758 pieces
MOQ: 400 pcs
Order Increment : 1 pcs
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