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Same model may have multiple batches, images only for reference.
SSM6N16FE,L3F Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

SSM6N16FE,L3F

Part No SSM6N16FE,L3F
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Toshiba Semiconductor and Storage
Package Tape & Reel
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 100mA (Ta)
Rds On (Max) @ Id, Vgs 3Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id 1.1V @ 100µA
Input Capacitance (Ciss) (Max) @ Vds 9.3pF @ 3V
Power - Max 150mW (Ta)
Temperature Range - Operating 150°C
Mounting SMD (SMT)
Package / Case SOT-563, SOT-666
Supplier Device Package ES6
Base Product Number SSM6N16
Other Names SSM6N16FE,L3F(B,SSM6N16FEL3FCT,SSM6N16FEL3FTR,SSM6N16FEL3FDKR
Standard Package 8,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1278543-SSM6N16FE,L3F
Ultra Librarian 3D Model Ultra Librarian SSM6N16FE,L3F CAD Model

Description

The SSM6N16FE,L3F electronic component from Toshiba Semiconductor and Storage is rated for a drain to source voltage (Vdss) of 20V and a continuous drain current (Id) of 100mA (Ta) @ 25°C.

  • Drain to Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 100mA (Ta) @ 25°C
  • Maximum Rds On: 3Ohm @ 10mA, 4V
  • Maximum Vgs(th): 1.1V @ 100μA
  • Temperature Range: 150°C

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