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SSM6N57NU

Part No SSM6N57NU
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFETs Silicon N-Channel MOS
Sample
Rohs State rohs
ECAD Module
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Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 1259603-SSM6N57NU
Manufacturer Homepage www.semicon.toshiba.co.jp/eng
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SSM6N57NU CAD Model

Description

The SSM6N57NU is a dual N-channel MOSFET manufactured by Toshiba Semiconductor and Storage. This device is designed for high-speed switching applications and features a low on-resistance (RDS(on)), minimizing power loss during switching. The dual configuration allows for compact designs and can be used in various applications requiring multiple switching elements or push-pull configurations. It's ideal for DC-DC converters, load switching, and motor control applications.

Applications

  • DC-DC Converters: Used as a switching element in DC-DC voltage converters.
  • Load Switching: Controlling various loads such as LEDs, relays, and small motors.
  • Motor Control: Driving small motors in portable devices and other applications.
  • Power Management: General use in circuits requiring efficient power management.

Features

  • Dual N-Channel MOSFET: Integrates two N-channel MOSFETs in a single package.
  • Low On-Resistance (RDS(on)): Minimizes power loss during switching.
  • High-Speed Switching: Enables efficient switching at high frequencies.
  • Surface Mount Package: Available in a compact surface-mount package for space-saving designs.

Benefits

  • Efficient Switching: Low on-resistance reduces power loss and improves efficiency in switching applications.
  • Compact Design: Dual configuration allows for smaller and more compact designs.
  • Versatile Application: Suitable for a wide range of switching and load control applications.
  • Simplified Design: Integration of two MOSFETs simplifies circuit layout.

Additional Details

The SSM6N57NU's key specifications include its drain-source voltage, gate-source voltage, drain current, and on-resistance. The gate charge is also an important parameter for high-speed switching applications. This MOSFET is commonly used in portable devices, power supplies, and motor control circuits where efficiency and size are critical. The dual configuration can be used to implement half-bridge or push-pull topologies, further enhancing its versatility. The device is RoHS compliant, indicating it is free from hazardous substances.

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Pricing & Ordering

Quantity Unit Price Ext. Price
345+ $0.1686 $58.1670
835+ $0.1386 $115.7310
1,295+ $0.1340 $173.5300
1,790+ $0.1294 $231.6260
2,295+ $0.1259 $288.9405
3,095+ $0.1120 $346.6400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 46,000 pieces
MOQ: 345 pcs
Order Increment : 1 pcs
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