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Same model may have multiple batches, images only for reference.
SSM6P69NU,LF Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

SSM6P69NU,LF

Part No SSM6P69NU,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Toshiba Semiconductor and Storage
Package Tape & Reel
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate, 1.8V Drive
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 4A (Ta)
Rds On (Max) @ Id, Vgs 45mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id 1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 6.74nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 480pF @ 10V
Power - Max 1W (Ta)
Temperature Range - Operating 150°C
Mounting SMD (SMT)
Package / Case 6-WDFN Exposed Pad
Supplier Device Package 6-µDFN (2x2)
Base Product Number SSM6P69
Other Names SSM6P69NULFCT,SSM6P69NULFTR,SSM6P69NU,LF(T,SSM6P69NULFDKR,SSM6P69NU,LF(B
Standard Package 3,000
RoHS Status RoHS non-compliant
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278542-SSM6P69NU,LF
Ultra Librarian 3D Model Ultra Librarian SSM6P69NU,LF CAD Model

Description

The SSM6P69NU,LF is an electronic component that belongs to the Discrete Semiconductor Products category.

  • Drain to Source Voltage: 20V
  • Continuous Drain Current: 4A @ 25°C
  • Maximum Gate-Source Threshold Voltage: 1.2V @ 1mA
  • Maximum Input Capacitance: 480pF @ 10V

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