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TC58NVG0S3HTA00 Real Image TC58NVG0S3HTA00 real image7065
Same model may have multiple batches, images only for reference.
TC58NVG0S3HTA00 Real Image TC58NVG0S3HTA00 real image7065
TC58NVG0S3HTA00 Real Image TC58NVG0S3HTA00 real image7065
Same model may have multiple batches, images only for reference.

TC58NVG0S3HTA00

Part No TC58NVG0S3HTA00
Manufacturer Toshiba Semiconductor and Storage
Catalog Flash
Description NAND Flash Parallel 3.3V 1G-bit 128M x 8 48-Pin TSOP-I / IC EEPROM 1GBIT 25NS 48TSOP
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Integrated Circuits
Manufacturer Toshiba Semiconductor and Storage
Packaging Tray
Status Active
Memory Format EEPROM
Technology EEPROM - NAND
Memory Size 1Gb (128M x 8)
Access Time 25ns
Supply Voltage - Operating 2.7 V to 3.6 V
Temperature Range - Operating 0°C to 70°C (TA)
Mounting SMD (SMT)
Case / Package 48-TSOP I
Win Source Part Number 056492-TC58NVG0S3HTA00
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Quantity per package 96
Family Name TC58NVG0S3HTA00
ECCN 3A991.b.1.a
Country of Origin Japan
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian TC58NVG0S3HTA00 CAD Model

Description

The Toshiba Semiconductor and Storage TC58NVG0S3HTA00 is an EEPROM-NAND integrated circuit that provides a memory size of 1Gb (128M x 8) with an access time of 25ns.

  • Operating Voltage: The device operates @ a supply voltage range of 2.7V to 3.6V and is available in a 48-TSOP I package.
  • Supply and Demand: The supply and demand status is balanced, and the estimated EOL date is 2027.

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