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TC7WZ00FK 5RSN,F,T

Part No TC7WZ00FK 5RSN,F,T
Manufacturer Toshiba Semiconductor and Storage
Catalog Misc Products
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Manufacturer Toshiba Semiconductor and Storage
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 839864-TC7WZ00FK 5RSN,F,T
Ultra Librarian 3D Model Ultra Librarian TC7WZ00FK 5RSN,F,T CAD Model

Description

The TC7WZ00FK 5RSN,F,T is a high-speed CMOS logic gate from Toshiba Semiconductor and Storage. This is a dual 2-input NAND gate integrated circuit (IC) designed for low-voltage operation and high-performance applications. It belongs to the TC7WZ series, which is known for its miniaturization and low power consumption. The device is fabricated using advanced silicon gate CMOS technology, ensuring optimal speed and power efficiency.

Applications

  • High-speed data processing
  • Low-voltage digital systems
  • Mobile communication devices
  • Portable electronic devices
  • General logic functions in digital circuits

Features

  • Low-voltage operation: 1.65 V to 5.5 V
  • High-speed operation: tpd = 2.7 ns (typical) at 5 V
  • Low power consumption: ICC = 2 μA (maximum) at 5 V
  • Miniature package: US8
  • Wide operating temperature range: -40°C to 85°C
  • High noise immunity

Benefits

  • Enhanced system performance due to high-speed operation, allowing for faster data processing and signal transmission.
  • Extended battery life in portable devices through low power consumption, which is crucial for mobile applications.
  • Reduced board space requirements as the US8 package minimizes the physical footprint on the PCB.
  • Reliable operation across a broad range of temperatures, ensuring stable performance in various environmental conditions.
  • Simplified circuit design due to compatibility with various voltage levels, providing flexibility in system integration.

Additional Details

The TC7WZ00FK 5RSN,F,T operates within a supply voltage range of 1.65V to 5.5V, making it suitable for both low-voltage and higher-voltage digital systems. The propagation delay time (tpd) is typically 2.7 ns at 5V, allowing for high-speed signal processing. The static current consumption (ICC) is a maximum of 2 μA at 5V, ensuring minimal power wastage. The device is housed in a US8 (Ultra Small 8-pin) package, which reduces the amount of board space required. This NAND gate also provides high noise immunity, which prevents unwanted signal changes caused by noise, thereby enhancing system reliability.

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