The TG2213S TE85L is a Silicon NPN Epitaxial Planar Transistor from Toshiba Semiconductor and Storage. It is designed for high-frequency amplifier applications, offering a good balance of gain and low noise performance. The TE85L suffix indicates a specific packaging or tape and reel configuration for automated assembly processes.

Applications

• High-frequency amplification
• Oscillator circuits
• Mixer stages
• RF front-ends for communication devices
• Wireless communication systems

Features

• Silicon NPN Epitaxial Planar structure
• High transition frequency (fT)
• Low noise figure
• Optimized for high-frequency performance
• Small surface-mount package
• TE85L packaging for automated assembly

Benefits

• Efficient signal amplification in RF applications
• Reduced noise and improved signal clarity
• Enhanced performance in wireless communication systems
• Suitable for compact electronic designs
• Cost-effective solution for high-frequency amplification
• Facilitates streamlined manufacturing processes due to TE85L packaging

Additional Details

The TG2213S TE85L transistor is commonly found in RF amplifiers and front-end circuits of wireless communication devices. Its key specifications include a collector-emitter voltage (VCEO), collector current (IC), and power dissipation (PC) that are carefully balanced for optimal performance. The TE85L packaging denotes a specific tape and reel configuration designed for automated pick-and-place assembly, reducing manufacturing time and costs. The device's high transition frequency allows it to function effectively in circuits operating at several GHz. Proper thermal management is crucial to ensure the transistor operates reliably within its specified temperature range, typically between -55°C and +150°C. As with many Toshiba semiconductors, the TG2213S TE85L is likely lead-free and RoHS compliant.