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Same model may have multiple batches, images only for reference.
TH58BVG3S0HBAI6
Same model may have multiple batches, images only for reference.

TH58BVG3S0HBAI6

Part No TH58BVG3S0HBAI6
Manufacturer Toshiba Semiconductor and Storage
Catalog EEPROM
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Access Time 220 µs
Height 1 mm
Interface Parallel
Maximum Operating Temperature 85 °C
Max Supply Voltage 3.6 V
Memory Size 1 GB
Memory Type EEPROM, NAND
Manufacturer Package Identifier P-VFBGA67-0608-0.80-001
Min Operating Temperature -40 °C
Min Supply Voltage 2.7 V
Win Source Part Number 1099235-TH58BVG3S0HBAI6
Categories EEPROM
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian TH58BVG3S0HBAI6 CAD Model

Description

The TH58BVG3S0HBAI6 from Toshiba Semiconductor and Storage is a parallel interface EEPROM and NAND memory component.

  • Memory Size: 1 GB
  • Access Time: 220 microseconds
  • Minimum Operating Temperature: -40 degrees Celsius
  • Maximum Operating Temperatures: 85 degrees Celsius
  • Popularity: Low
  • Supply and Demand Status: Shortage

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46+ $5.0219 $231.0074
60+ $4.8545 $291.2700
80+ $4.3532 $348.2560
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