The TH58TEG8DDJTA20 is a 64Gbit (8Gbyte) NAND flash memory device manufactured by Toshiba Semiconductor and Storage. It is based on a 24nm process technology, offering a balance of performance, density, and cost-effectiveness. This device is designed for use in a variety of storage applications.

Applications

• Solid State Drives (SSDs)
• USB Flash Drives
• Memory Cards (SD, microSD)
• Embedded Systems
• Mobile Devices (Smartphones, Tablets)

Features

• Capacity: 64 Gbit (8 GByte)
• Interface: Open NAND Flash Interface (ONFI) 2.3
• Supply Voltage: 3.3V
• Page Size: 8KB + 640B (spare)
• Block Size: 512KB
• Data Transfer Rate: Up to 40MB/s

Benefits

• High storage density enables large capacity storage in small form factors.
• Fast data transfer rates improve system responsiveness.
• Low power consumption extends battery life in portable applications.
• High reliability ensures data integrity and long-term storage.
• Compliance with ONFI standards ensures compatibility with a wide range of controllers.

Additional Details

The TH58TEG8DDJTA20 utilizes a floating gate cell technology to store data. The device incorporates error correction code (ECC) to improve data reliability. The device also features wear leveling algorithms to extend the lifespan of the flash memory by distributing write and erase cycles evenly across the memory array. It supports various power-saving modes to reduce power consumption during idle periods. It is available in a standard TSOP package. The TH58TEG8DDJTA20 is a cost-effective and reliable solution for various storage applications. The device also has enhanced write endurance and data retention characteristics. Toshiba's advanced process technology provides optimized performance and reliability for demanding consumer and industrial applications. The device is RoHS compliant and meets industry environmental standards.