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TJ50S06M3L

Part No TJ50S06M3L
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 50A DPAK-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 50A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 3V @ 1mA
Max Gate Charge 124nC @ 10V
Max Input Capacitance 6290pF @ 10V
Maximum Gate-Source Voltage +10V, -20V
Power Dissipation (Max) 90W (Tc)
Maximum Rds On at Id,Vgs 13.8 mOhm @ 25A, 10V
Temperature Range - Operating 175°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK+
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 212846-TJ50S06M3L
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian TJ50S06M3L CAD Model

Description

The TJ50S06M3L is a silicon N-channel power MOSFET manufactured by Toshiba Semiconductor and Storage. It's designed for high-efficiency switching applications. This MOSFET is characterized by its low on-resistance and fast switching speed, making it suitable for a variety of power management systems.

Applications

  • DC-DC Converters: Used in voltage regulation and power conversion circuits.
  • AC-DC Power Supplies: Found in power supplies for various electronic devices.
  • Motor Control: Employed in circuits controlling the speed and torque of electric motors.
  • Switching Regulators: Used in efficient voltage regulators.
  • Load Switches: Can be used to efficiently switch loads on and off.

Features

  • N-Channel MOSFET: Offers efficient current conduction.
  • Low On-Resistance (RDS(on)): Minimizes power loss during conduction, enhancing efficiency.
  • High-Speed Switching: Enables fast response times in switching applications.
  • Enhancement Mode: Requires a positive gate voltage to turn on.
  • Avalanche Rated: Designed to withstand avalanche breakdown events, enhancing reliability.

Benefits

  • Increased Efficiency: Low on-resistance reduces power dissipation, leading to higher efficiency in power circuits.
  • Reduced Heat Generation: Lower power loss means less heat is generated, simplifying thermal management.
  • Faster Switching Speeds: Enables quicker response times in dynamic power applications.
  • Improved Reliability: Avalanche rating provides robustness against voltage transients.
  • Simplified Circuit Design: Enhancement mode operation simplifies the drive circuitry.

Additional Details

The TJ50S06M3L typically comes in a through-hole package, allowing for easy mounting and heat dissipation. Key specifications to consider include the drain-source voltage (VDS), gate-source voltage (VGS), continuous drain current (ID), and power dissipation (PD). The specific values for these parameters can be found in the official Toshiba datasheet. It is crucial to consult the datasheet for detailed electrical characteristics, thermal performance, and safe operating area to ensure proper and reliable operation.

This MOSFET is commonly used in applications where energy efficiency and reliable switching performance are paramount. Its robust design and key features make it a versatile component for modern power electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.9589 $58.7670
75+ $1.6078 $120.5850
115+ $1.5569 $179.0435
155+ $1.5073 $233.6315
200+ $1.4565 $291.3000
270+ $1.3063 $352.7010
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 40,900 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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