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TK10E60W,S1VX

Part No TK10E60W,S1VX
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 600V 9.7A TO-220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 9.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.7V @ 500μA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 700pF @ 300V
Maximum Gate-Source Voltage ±30V
FET Feature Super Junction
Power Dissipation (Max) 100W (Tc)
Maximum Rds On at Id,Vgs 380 mOhm @ 4.9A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220
Dimension TO-220-3
Win Source Part Number 1050186-TK10E60W,S1VX
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK10E60W,S1VX CAD Model

Description

The Toshiba Semiconductor and Storage TK10E60W,S1VX is an N-Channel MOSFET with a power dissipation of 100W (Tc).

  • Power Dissipation: 100W (Tc)
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 9.7A (Ta)
  • Gate-Source Threshold Voltage: 3.7V @ 500μA
  • Maximum Gate Charge: 20nC @ 10V
  • Maximum Input Capacitance: 700pF @ 300V
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On: 380 mOhm @ 4.9A, 10V
  • Package: TO-220
  • Drive Voltage: 10V
  • Popularity: popular in the market
  • Manufacturer: Toshiba Semiconductor and Storage

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Pricing & Ordering

Quantity Unit Price Ext. Price
105+ $0.5717 $60.0285
250+ $0.4689 $117.2250
385+ $0.4551 $175.2135
525+ $0.4401 $231.0525
680+ $0.4250 $289.0000
910+ $0.3812 $346.8920
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,000 pieces
MOQ: 105 pcs
Order Increment : 1 pcs
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