The Toshiba Semiconductor and Storage TK10J80E is an N-channel MOSFET transistor with a drain-source breakdown voltage of 800V and a continuous drain current of 10A (Ta).

• Gate-Source Threshold Voltage: It has a gate-source threshold voltage of 4V @ 1mA
• Maximum Gate Charge: and a maximum gate charge of 46nC @ 10V.
• Maximum Rds On: The maximum Rds On @ Id,Vgs is 1 Ohm @ 5A, 10V.
• Drive Voltage: This transistor has a drive voltage (Max Rds On, Min Rds On) of 10V and is mounted through hole.
• Case/Package: It has a TO-3P(N) case/package and a dimension of TO-3P-3, SC-65-3.
• Temperature Range: The transistor has a temperature range of 150°C (TJ) and is limited in supply and demand status.