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Same model may have multiple batches, images only for reference.
TK3A60DA(Q,M) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TK3A60DA(Q,M)

Part No TK3A60DA(Q,M)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 2.5A TO-220SIS
Datasheet
TK3A60DA(Q,M) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.4V @ 1mA
Max Gate Charge 9nC @ 10V
Max Input Capacitance 380pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 30W (Tc)
Maximum Rds On at Id,Vgs 2.8 Ohm @ 1.3A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220SIS
Dimension TO-220-3 Full Pack
Win Source Part Number 125297-TK3A60DA(Q,M)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK3A60DA(Q,M) CAD Model

Description

Its supply and demand status is balanced.

  • Polarity: N-channel MOSFET
  • Maximum Power Dissipation: 30W
  • Drain-Source Breakdown Voltage: 600V
  • Maximum Gate Charge: 9nC
  • Maximum Input Capacitance: 380pF

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Pricing & Ordering

Quantity Unit Price Ext. Price
7+ $8.5262 $59.6834
17+ $6.9958 $118.9286
26+ $6.7775 $176.2150
36+ $6.5592 $236.1312
46+ $6.3398 $291.6308
61+ $5.6849 $346.7789
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,860 pieces
MOQ: 7 pcs
Order Increment : 1 pcs
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