The Toshiba Semiconductor and Storage 056869-TK11A60D is a high-performance N-Channel MOSFET.

• Power Dissipation: It can handle a maximum power dissipation of 45W (Tc) and has a drain-source breakdown voltage of 600V.
• Rds On: The MOSFET has a maximum Rds On of 650 mOhm @ 5.5A, 10V and a gate-source threshold voltage of 4V @ 1mA.
• Package: It comes in a TO-220SIS package and is mounted through hole.
• Voltage: The maximum gate-source voltage of the MOSFET is +/-30V, and the maximum input capacitance is 1550pF @ 25V.
• Supply and Demand: The supply and demand status of this MOSFET is balanced.