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Same model may have multiple batches, images only for reference.
TK12A60D Real Image
Same model may have multiple batches, images only for reference.

TK12A60D

Part No TK12A60D
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 12A TO-220SIS
Datasheet
TK12A60D Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 38nC @ 10V
Max Input Capacitance 1800pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 45W (Tc)
Maximum Rds On at Id,Vgs 550 mOhm @ 6A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220SIS
Dimension TO-220-3 Full Pack
Win Source Part Number 056870-TK12A60D
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK12A60D CAD Model

Description

The TK12A60D is an N-Channel MOSFET transistor manufactured by Toshiba Semiconductor and Storage.

  • Power Dissipation: 45W (Tc)
  • Continuous Drain Current: 12A (Ta)
  • Maximum Rds On @ Id,Vgs: 550 mOhm @ 6A, 10V
  • Gate-Source Threshold Voltage: 4V @ 1mA
  • Maximum Gate Charge: 38nC @ 10V
  • Maximum Input Capacitance: 1800pF @ 25V
  • Package: TO-220SIS package
  • Suitable for: Use in discrete semiconductor products
  • Drive Voltage (max Rds On, Min Rds On): 10V
  • Status: Active
  • Popularity: Medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6722 $60.4980
210+ $0.5521 $115.9410
325+ $0.5348 $173.8100
450+ $0.5174 $232.8300
580+ $0.5001 $290.0580
775+ $0.4481 $347.2775
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Availability: 12,000 pieces
MOQ: 90 pcs
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