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Same model may have multiple batches, images only for reference.
TK12A60W Real Image
Same model may have multiple batches, images only for reference.

TK12A60W

Part No TK12A60W
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH Si 600V 11.5A 3-Pin(3+Tab) TO-220SIS / MOSFET N CH 600V 11.5A TO-220SIS
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 11.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.7V @ 600μA
Max Gate Charge 25nC @ 10V
Max Input Capacitance 890pF @ 300V
Maximum Gate-Source Voltage ±30V
FET Feature Super Junction
Power Dissipation (Max) 35W (Tc)
Maximum Rds On at Id,Vgs 300 mOhm @ 5.8A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220SIS
Dimension TO-220-3 Full Pack
Win Source Part Number 212860-TK12A60W
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name TK12A60W
Introduction Date August 27, 2012
ECCN EAR99
Country of Origin China, Malaysia
Estimated EOL Date 2030
Ultra Librarian 3D Model Ultra Librarian TK12A60W CAD Model

Description

The TK12A60W is a super junction MOSFET manufactured by Toshiba Semiconductor and Storage and a limited supply and demand status.

  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 11.5A
  • Maximum Gate-Source Voltage: ±30V
  • Suitable for: Various applications, including switching regulators, power supplies, and motor control circuits.

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6780 $61.0200
210+ $0.5567 $116.9070
325+ $0.5394 $175.3050
445+ $0.5221 $232.3345
575+ $0.5047 $290.2025
770+ $0.4528 $348.6560
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Availability: 5,280 pieces
MOQ: 90 pcs
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