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Same model may have multiple batches, images only for reference.
TK12E60W,S1VX(S
Same model may have multiple batches, images only for reference.

TK12E60W,S1VX(S

Part No TK12E60W,S1VX(S
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH Si 600V 11.5A 3-Pin(3+Tab) TO-220
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package TO-220
Continuous Drain Current (ID) 11.5 A
Gate to Source Voltage (Vgs) 30 V
Maximum Operating Temperature 150 °C
Min Operating Temperature -55 °C
Mount Through Hole
Number of Elements 1
Power Dissipation 110 W
RoHS Non-Compliant
Win Source Part Number 1008959-TK12E60W,S1VX(S
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian TK12E60W,S1VX(S CAD Model

Description

The TK12E60W,S1VX(S) by Toshiba Semiconductor and Storage is a power MOSFET transistor that is used in various applications.

  • Manufacturer: Toshiba Semiconductor and Storage
  • Maximum Operating Temperature: 150 degrees Celsius
  • Minimum Operating Temperature: -55 degrees Celsius
  • Continuous Drain Current (ID): 11.5 A
  • Gate to Source Voltage (Vgs): 30 V
  • Mounting Type: Through Hole
  • Case/Package: TO-220
  • Alternative Parts: STP11NK40Z, STP19NM50N, STP18NM60N, FQP14N15, FDP12N60NZ, FQP13N50TK12E60WS1VX(S) and TK12E60WS1VXS

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.7120 $53.4000
150+ $0.6669 $100.0350
235+ $0.6444 $151.4340
335+ $0.5993 $200.7655
435+ $0.5768 $250.9080
545+ $0.5543 $302.0935
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,970 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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