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Same model may have multiple batches, images only for reference.
TK12P60W,RVQ Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TK12P60W,RVQ

Part No TK12P60W,RVQ
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 600V 11.5A DPAK
Datasheet
TK12P60W,RVQ Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 11.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.7V @ 600μA
Max Gate Charge 25nC @ 10V
Max Input Capacitance 890pF @ 300V
Maximum Gate-Source Voltage ±30V
FET Feature Super Junction
Power Dissipation (Max) 100W (Tc)
Maximum Rds On at Id,Vgs 340 mOhm @ 5.8A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 128472-TK12P60W,RVQ
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK12P60W,RVQ CAD Model

Description

The TK12P60W,RVQ is a high-voltage Super Junction MOSFET from Toshiba Semiconductor and Storage.

  • Drain-Source Breakdown Voltage: 600V
  • Maximum Continuous Drain Current: 11.5A @ 25°C
  • Features: Low on-resistance and gate charge, making it suitable for high-frequency switching applications
  • Maximum Input Capacitance: 890pF @ 300V
  • Gate-Source Threshold Voltage: 3.7V @ 600μA
  • Package: Surface mount DPAK package

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.5131 $60.5240
95+ $1.2416 $117.9520
145+ $1.2035 $174.5075
200+ $1.1642 $232.8400
260+ $1.1250 $292.5000
345+ $1.0095 $348.2775
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,000 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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