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TK13A50DA

Part No TK13A50DA
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 12.5A TO-220SIS
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 12.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 28nC @ 10V
Max Input Capacitance 1550pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 45W (Tc)
Maximum Rds On at Id,Vgs 470 mOhm @ 6.3A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220SIS
Dimension TO-220-3 Full Pack
Win Source Part Number 056645-TK13A50DA
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK13A50DA CAD Model

Description

The Toshiba Semiconductor and Storage MOSFET with the part number 056645-TK13A50DA is a through-hole mounting technology N-Channel polarity MOSFET.

  • Power Dissipation: 45W (Tc)
  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current @ 25°C: 12.5A (Ta)
  • Gate-Source Threshold Voltage: 4V @ 1mA
  • Maximum Gate Charge: 28nC @ 10V
  • Maximum Input Capacitance: 1550pF @ 25V
  • Maximum Rds On @ Id, Vgs: 470 mOhm @ 6.3A, 10V
  • Case/Package: TO-220SIS
  • Dimension: TO-220-3 Full Pack
  • Product Category: Discrete Semiconductor Products
  • Status: Active
  • Operating Temperature Range: 150°C (TJ)
  • Supply and demand status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $6.6851 $60.1659
22+ $5.4851 $120.6722
33+ $5.3142 $175.3686
45+ $5.1421 $231.3945
59+ $4.9711 $293.2949
78+ $4.4571 $347.6538
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 11,600 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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