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TK13A60D Real Image TK13A60D real image7252 TK13A60D real image7253
Same model may have multiple batches, images only for reference.
TK13A60D Real Image TK13A60D real image7252 TK13A60D real image7253
TK13A60D Real Image TK13A60D real image7252 TK13A60D real image7253
Same model may have multiple batches, images only for reference.

TK13A60D

Part No TK13A60D
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 13A TO220SIS
Datasheet
TK13A60D Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 13A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 40nC @ 10V
Max Input Capacitance 2300pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 50W (Tc)
Maximum Rds On at Id,Vgs 430 mOhm @ 6.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220SIS
Dimension TO-220-3 Full Pack
Win Source Part Number 056646-TK13A60D
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK13A60D CAD Model

Description

The TK13A60D is an N-Channel MOSFET manufactured by Toshiba Semiconductor and Storage.

  • Status: Active
  • Supply and Demand Status: Balanced
  • Win Source Part Number: 056646-TK13A60D
  • Design: For use in electronic devices that require a high-power switch.
  • Maximum Power Dissipation: 50W
  • Maximum Continuous Drain Current: 13A @ 25°C

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175+ $0.6630 $116.0250
270+ $0.6422 $173.3940
375+ $0.6214 $233.0250
485+ $0.6006 $291.2910
645+ $0.5382 $347.1390
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