The Toshiba Semiconductor and Storage TK13A65U(STA4,Q,M) is an N-channel MOSFET with a power dissipation of 40W (Tc).

• Drive Voltage (Max Rds On, Min Rds On): 10V
• Drain-Source Breakdown Voltage: 650V
• Continuous Drain Current: 13A (Ta) @ 25°C
• Gate-Source Threshold Voltage: 5V @ 1mA
• Maximum Gate Charge: 17nC @ 10V
• Maximum Input Capacitance: 950pF @ 10V
• Maximum Gate-Source Voltage: ±30V
• Maximum Rds On @ Id,Vgs: 380 mOhm @ 6.5A, 10V
• Case/Package: TO-220SIS
• Dimension: TO-220-3 Full Pack
• Temperature Range: 150°C (TJ)