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TK15A50D(Q,M)

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Part No	TK15A50D(Q,M)
Manufacturer	Toshiba Semiconductor and Storage
Catalog	Transistors - FETs, MOSFETs - RF
Description	Trans MOSFET N-CH 500V 15A 3-Pin(3+Tab) TO-220SIS
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Mounting	SMD (SMT)
Case / Package	TO-220-3
Continuous Drain Current (ID)	15 A
Drain to Source Breakdown Voltage	500 V
Drain to Source Resistance	300 mΩ
Drain to Source Voltage (Vdss)	500 V
Element Configuration	Single
Fall Time	25 ns
Gate to Source Voltage (Vgs)	30 V
Input Capacitance	2.3 nF
Maximum Operating Temperature	150 °C
Max Power Dissipation	50 W
Min Operating Temperature	-55 °C
Mount	Through Hole
Number of Elements	1
Number of Pins	67
Power Dissipation	50 W
Radiation Hardening	No
Rds On Max	300 mΩ
REACH SVHC	Unknown
Rise Time	50 ns
RoHS	Compliant
Win Source Part Number	1022401-TK15A50D(Q,M)
Categories	Transistors - FETs, MOSFETs - RF
Manufacturer	Toshiba Semiconductor and Storage
Popularity	Low
Supply and Demand Status	Shortage
Ultra Librarian 3D Model	Ultra Librarian TK15A50D(Q,M) CAD Model

Alternative Products

Description

The TK15A50D(Q,M) is a single element MOSFET transistor manufactured by Toshiba Semiconductor and Storage.

Drain to Source Voltage (Vdss): 500 V
Input Capacitance: 2.3 nF
Power Dissipation: 50 W
Continuous Drain Current (ID): 15 A
Maximum Gate to Source Voltage (Vgs): 30 V
Drain to Source Resistance: 300 mΩ
Package: TO-220-3
Mounting Type: Through-Hole
Maximum Operating Temperature: 150 °C
Rise Time: 50 ns
Fall Time: 25 ns
Alternative Parts: Not Available

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TK15A50D(Q,M)

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